Focused Ion and Electron Beam System Ethox NX5000 Series
Product Description
The Hitachi Ethos FIB-SEM incorporates the latest-generation FE-SEM with superb beam brightness and stability. Ethos delivers high-resolution at low voltages combined with ion optics for nanoscale precision processing.
Specification
| Product Description | |
|---|---|
| Accelerating voltage | FIB (NX5000) : 0.5 kV – 30 kV FIB (NX5200) : 0.5 kV – 30 kV |
| Ion Source | FIB (NX5000) : Ga liquid Metal Ion Source FIB (NX2500) : Ga liquid Metal Ion Source |
| SIM resolution* | FIB (NX5000) : 4 nm @ 30 kV FIB (NX5200) : 4 nm @ 30 kV |
| Beam current | FIB (NX5000) : 100 nA FIB (NX5200) : 100 nA |
| Detectors | In-column secondary electron detector, SE (U) |
| 5-axis motorized stage (with feedback control) | X : 155 mm Y : 155 mm Z : 16.5 mm R : 0 - 360° endless |
| SEM | |
| Max. beam current | 10 nA |
| Electron Source | Cold cathode field emission |
| SEM Resolution* | 1.5 nm @ 1 kV, 0.7 nm @ 15 kV |
| Accelerating Voltage | 0.1 kV – 30 kV |
Resources
| Focused Ion and Electron Beam System Ethos NX5000 Series.pdf |
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