Focused Ion and Electron Beam System Ethox NX5000 Series

Focused Ion and Electron Beam System Ethox NX5000 Series


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Product Description

Hitachi Ethos FIB-SEM mengintegrasikan FE-SEM generasi terbaru dengan kecerahan dan stabilitas beam yang unggul.  Ethos menghadirkan resolusi tinggi pada tegangan rendah, dipadukan dengan ion optics untuk pemrosesan presisi berskala nano.

Specification

Product Description
Accelerating voltage

FIB (NX5000) : 0.5 kV – 30 kV

FIB (NX5200) : 0.5 kV – 30 kV

Ion Source

FIB (NX5000) : Ga liquid Metal Ion Source

FIB (NX2500) : Ga liquid Metal Ion Source

SIM resolution*

FIB (NX5000) : 4 nm @ 30 kV
                               60 nm @ 2 kV (Edge resolution)

FIB (NX5200) : 4 nm @ 30 kV
                               50 nm @ 2 kV (Edge resolution)

Beam current

FIB (NX5000) : 100 nA

FIB (NX5200) : 100 nA

Detectors

In-column secondary electron detector, SE (U)
In-column backscattered electron detector, BSE (U)
In-column backscattered electron detector, BSE (L)
Chamber mounted secondary electron detector, SE (L)

5-axis motorized stage (with feedback control)

X : 155 mm

Y : 155 mm

Z : 16.5 mm

R : 0 - 360° endless

SEM
Max. beam current

10 nA

Electron Source

Cold cathode field emission

SEM Resolution*

1.5 nm @ 1 kV, 0.7 nm @ 15 kV

Accelerating Voltage

0.1 kV – 30 kV

Resources

Focused Ion and Electron Beam System Ethos NX5000 Series.pdf

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